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CCD Image Sensors in Deep-Ultraviolet: Degradation Behavior and Damage Mechanisms »

Book cover image of CCD Image Sensors in Deep-Ultraviolet: Degradation Behavior and Damage Mechanisms by F. M. Li

Authors: F. M. Li, Arokia Nathan
ISBN-13: 9783540226802, ISBN-10: 354022680X
Format: Hardcover
Publisher: Springer-Verlag New York, LLC
Date Published: May 2005
Edition: (Non-applicable)

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Author Biography: F. M. Li

Flora Li received her Bachelor of Applied Science degree in Electrical Engineering from University of Waterloo, Canada, in 2002. She completed her MASc degree in Electrical Engineering at University of Waterloo in 2003, where her research focus was on the investigation of deep-UV sensitive CCD image sensors and the related radiation damage issues. She is currently pursuing her Ph.D. degree in the field of organic electronics and polymer TFTs, under the supervision of Prof. Arokia Nathan at the University of Waterloo.

Arokia Nathan received his PhD in Electrical Engineering from the University of Alberta, Edmonton, Alberta, Canada, in 1988, where he was engaged in research related to the physics and numerical modeling of semiconductor microsensors. In 1987, he joined LSI Logic Corp., Santa Clara, CA where he worked on advanced multichip packaging techniques and related issues. Subsequently, he was at the Institute of Quantum Electronics, ETH Zürich, Switzerland. In 1989, he joined the Department of Electrical and Computer Engineering, University of Waterloo, where he is currently a Professor. In 1995, he was a Visiting Professor at the Physical Electronics Laboratory, ETH Zürich. His present research interests lie in fabrication of devices, circuits, and systems using disordered semiconductor, including organic, materials on rigid and mechanically flexible substrates for large area electronics. He held the DALSA/NSERC industrial research chair in sensor technology, and is a recipient of the Natural Sciences and Engineering Research Council E.W.R. Steacie Fellowship. He has published extensively in the field of sensor technology and CAD, and thin film transistor electronics, and is a co-author of the book, Microtransducer CAD, published by Springer in 1999.

Book Synopsis

As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.

Table of Contents

1Introduction1
2Overview of CCD7
3CCD imaging in the ultraviolent (UV) regime23
4Silicon45
5Silicon dioxide51
6Si-SiO[subscript 2] interface81
7General effects of radiation95
8Effects of radiation on CCDs109
9UV-induced effects in Si121
10UV laser induced efforts in SiO[subscript 2]125
11UV laser induced effects at the Si-SiO[subscript 2] interface153
12CCD measurements at 157 nm157
13Design optimizations for future research195
14Concluding remarks207

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